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Fabrication of SiGe nanostructures for infrared devices

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The MBE growth conditions for the Stranski-Krastanov (SK) growth mode of tensile strained Si on Ge substrates were investigated. T... Weiterlesen
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Beschreibung

The MBE growth conditions for the Stranski-Krastanov (SK) growth mode of tensile strained Si on Ge substrates were investigated. These self-organized Si islands provide a confinement of delta2-electrons, which is of special interest for conduction-electron spin manipulation or for photoluminescence in the infrared range. Under tensile strain, the wetting layer (WL) thickness is increased and goes along with a rather unusual coexistence of SK growth and plastic strain relaxation already at an early stage of 3D growth. Modifying the surface energy with surfactants reduced the WL thickness but could not prevent the whole system from plastic strain relaxation within the islands. Further, the use of pre-structured Ge substrates offered preferred nucleation sites for the Si atoms and reduced the WL thickness. Finally, the growth of a tensile-strained modulation-doped pure Si channel on SiGe pseudo-substrates lead to very high electron mobility in the range of 420000cm2/Vs at low temperatures. The SK growth mode under tensile strain is astonishing in the Si/Ge material system, but these structures offer exciting new possibilities in the field of infra-red optical information technology.

Autorentext

Dipl.-Ing. Dr. Dietmar Pachinger, geboren in Wels, OÖ2005 - Masterstudium an der Medizinischen Universität Wien2004 - 2009 Doktoratstudium der techn. Wissenschaften undAnstellung als Forschungsassistent, JKU Linz2000-2001 Physik Studium an der Louis Pasteur Université deStrasbourg, Frankreich1997-2003 Studium der technischen Physik, JKU Linz.



Klappentext

The MBE growth conditions for the Stranski-Krastanov(SK) growth mode of tensile strained Si on Gesubstrates were investigated. These self-organized Siislands provide a confinement of delta2-electrons,which is of special interest for conduction-electronspin manipulation or for photoluminescence in theinfrared range. Under tensile strain, the wettinglayer (WL) thickness is increased and goes along witha rather unusual coexistence of SK growth and plasticstrain relaxation already at an early stage of 3Dgrowth. Modifying the surface energy with surfactantsreduced the WL thickness but could not prevent thewhole system from plastic strain relaxation withinthe islands. Further, the use of pre-structured Gesubstrates offered preferred nucleation sites for theSi atoms and reduced the WL thickness. Finally, thegrowth of a tensile-strained modulation-doped pure Sichannel on SiGe pseudo-substrates lead to very highelectron mobility in the range of 420000cm2/Vs at lowtemperatures. The SK growth mode under tensile strainis astonishing in the Si/Ge material system, butthese structures offer exciting new possibilities inthe field of infra-red optical information technology.

Produktinformationen

Titel: Fabrication of SiGe nanostructures for infrared devices
Untertitel: Herstellung von SiGe Nanostrukturen für infrarot-optische Bauteile
Autor:
EAN: 9783838108346
ISBN: 978-3-8381-0834-6
Format: Kartonierter Einband
Herausgeber: Südwestdeutscher Verlag für Hochschulschriften AG
Genre: Sonstiges
Anzahl Seiten: 196
Gewicht: 308g
Größe: H220mm x B150mm x T12mm
Jahr: 2015